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Stefano Bonaldo
Stefano Bonaldo
Istituto Nazionale di Fisica Nucleare
Nuclear magnetic resonance
Transistor
Irradiation
Physics
Optoelectronics
2
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19
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Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses
2019
IEEE Transactions on Nuclear Science
Stefano Bonaldo
Simone Gerardin
Xiaoming Jin
Alessandro Paccagnella
F. Faccio
Giulio Borghello
Daniel M. Fleetwood
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Citations (9)
Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses
2019
IEEE Transactions on Nuclear Science
Stefano Bonaldo
S. Mattiazzo
Christian Enz
Andrea Baschirotto
Alessandro Paccagnella
Xiaoming Jin
Simone Gerardin
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Citations (10)
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