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Chaoran Chang

State University of New York System

4

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Two-Dimensional Cold Electron Transport for Steep-Slope Transistors.

2021 ACS Nano
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Two-Dimensional Layered Materials for Electrochemical Energy Storage and Conversion

2021
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Monolayer MoS 2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection

2020 IEDM | International Electron Devices Meeting
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Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

2020 Advanced Materials
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