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Myoungsub Kim
Myoungsub Kim
SK Hynix
cross point
Physics
Optoelectronics
Electronic engineering
Chalcogenide
5
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26
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PE-ALD of Ge1-xSx amorphous chalcogenide alloys for OTS applications
2021
Journal of Materials Chemistry C
Myoungsub Kim
Young Jun Kim
Minkyu Lee
Seok Man Hong
Hyung Keun Kim
Tae-Hoon Kim
Seung Min Chung
Taeyoon Lee
Hyungjun Kim
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Citations (1)
Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET characteristics of Phase-change memory in Cross-point structure
2021
IEEE Electron Device Letters
Seok Man Hong
Myoungsub Kim
Seonghun Lee
Sang Hyun Ban
Hwanjun Zang
Hyejung Choi
Tae-Hoon Kim
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Growth and Electrical Characteristics of PE-ALD Germanium Sulfide for 3D Cross-Point Memory
2020
Myoungsub Kim
Youngjun Kim
Inkyu Sohn
Hyungjun Kim
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Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory
2020
IEEE Electron Device Letters
Sanghyun Ban
Tae Hoon Kim
Hyejung Choi
Wootae Lee
Seokman Hong
Hwanjun Zang
Beomseok Lee
Myoungsub Kim
Seungyun Lee
Hyungdong Lee
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Citations (3)
High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM
2018
IEDM | International Electron Devices Meeting
Tae Hoon Kim
Hyejung Choi
Myoungsub Kim
Jaeyun Yi
Donghoon Kim
Sunglae Cho
Hyunmin Lee
Chang-Youn Hwang
Eung Rim Hwang
Jeongho Song
Su-Jin Chae
Yunseok Chun
Jinkook Kim
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Citations (22)
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