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Yuvaraj Dora

University of California, Santa Barbara

13

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763

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High performance integrated photonic components for laser systems (Conference Presentation)

2020
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Total GaN solution to electrical power conversion

2011 DRC | Device Research Conference
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Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon

2011 Physica Status Solidi (c)
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Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

2010 Applied Physics Letters
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Preface: phys. stat. sol. (c) 7/10

2010 Physica Status Solidi (c)
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Effect of ohmic contacts on buffer leakage of GaN transistors

2006 IEEE Electron Device Letters
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Optimization of AlGaN/GaN HEMTs for high frequency operation

2006 Physica Status Solidi (a)
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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2006 IEEE Electron Device Letters
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High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

2006 IEDM | International Electron Devices Meeting
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High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates

2006 DRC | Device Research Conference
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