Phase-change behaviors of Sb80Te20/SbSe nanocomposite multilayer films

The crystallization temperatures and 10 year data retention temperatures of the Sb 80 Te 20 /SbSe nanocomposite multilayer films can be modulated by varying the thickness ratio between Sb 80 Te 20 and SbSe layers. The crystallization dynamics of the films induced by nanosecond laser pulses are studied using in situ reflectivity measurement. The set and reset operation for phase change memory device based on [Sb 80 Te 20 (4 nm)/SbSe (10 nm)] 7 multilayer film can be achieved by an electric pulse as short as 50 ns.