693 mV VOC industrial screen-printed n-PERT rear junction solar cells with stable efficiency beyond 22%

In this work, a high voltage, both sides screen-printed n-type passivated emitter and rear totally diffused rear junction (n-PERT-RJ) solar cell concept with Al point contacts on its rear side is proposed. A dash pattern for the firing through Ag contact is applied instead of performing the selective doping on the front surface field (FSF), that effectively reduced the area-weighted metal-induced recombination current J0, Met (Ag). The impact of different n-bulk properties on the n-PERT-RJ solar cell performance is revealed by Quokka3 simulation. An innovative “point-line” concept is then introduced which is composed of dot-shaped laser contact opening (LCO) and Al metal grid, aims to possess bifacial gain in addition to the preservation of high VOC in order to further reduce the levelized cost of energy (LCOE). This industrial type n-PERT-RJ solar cell demonstrates the same performance level as the advanced passivated contact solar cell concepts, the cost of ownership (COO) is close to the p-PERC solar cells, last but not least, shows the performance stability after light and elevated temperature induced degradation (LeTID) tests.