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A universal mechanism to describe III-V epitaxy on Si
A universal mechanism to describe III-V epitaxy on Si
2019
Ida Lucci
Simon Charbonnier
Laurent Pedesseau
Maxime Vallet
Laurent Cerutti
Jean-Baptiste Rodriguez
Eric Tournié
Rozenn Bernard
Antoine Létoublon
Nicolas Bertru
Alain Le Corre
Stéphanie Rennesson
Fabrice Semond
Gilles Patriarche
L. Largeau
Pascal Turban
Anne Ponchet
C Cornet
Keywords:
Optoelectronics
Epitaxy
Materials science
Crystallography
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