Influence of profile shape factors on intrinsic Si-MESFET device capacitances under diffusion mechanism

An accurate model for the device capacitances of ion-implanted MESFETs using Pearson distribution annealing is reported. The effects of profile shape factors on the intrinsic gate-source and gate-drain capacitances are analyzed in the pre- and post-anneal conditions. An established reduction in capacitances with Pearson's higher moments approach leads to optimization of devices performances.