Location-dependent multi-parameter detection behaviors using hetero-interfaced organic anti-ambipolar phototransistors

Abstract Phototransistors, in which the electrical characteristics change depending on the incident light, are applied to various fields such as image sensors, neuromorphic devices, and optical communication. While the mechanisms of phototransistors, such as the photoconductive effect (PC) and the photogating effect (PG), have been reported earlier, there is a lack of studies investigating a scheme for obtaining a large number of sensing parameters in a single detector. We propose a new concept for the multi-parameter detection of a hetero-interfaced anti-ambipolar phototransistor (HI-AA phototransistor), offering light incident location-dependent sensing behaviors. While conventional phototransistors were only able to detect limited information about the incident light, the proposed HI-AA phototransistor provides information about several sensing parameters depending on the incident location and light-absorbing material. Finally, we demonstrate multi-parameter light detection to distinguish three-wavelength light exposure information using the proposed scheme of incident location-dependent sensing behaviors.