A 0.61 e-noise global shutter CMOS image sensor with two-stage charge transfer pixels

A low-noise global shutter(GS) CMOS image sensor(CIS) with two-stage charge transfer (2-CT) structure is presented. The low-noise wide dynamic rangeperformance of the proposed pixel has been demonstrated by using column-parallel folding integration (FI)/cyclic ADCs. The GS image sensorwith 5.6μm-pitch 1200 × 900 pixels is implemented with a 0.11 μm CIS technology. The noise and dynamic rangeare measured to be 0.61 e − rms and 81 dB, respectively.