ABO3 multiferroic perovskite for memristive memory and neuromorphic computing

Unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO3 multiferroic perovskite make them having promising applications in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO3 multiferroic perovskite materials promote the memristive effect with highlighting data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have demonstrated in the ABO3-based memristive device for ultrahigh data storage, ultrafast information processing, and efficiency neuromorphic computing. These approaches presented today including controlling the dopant in active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to the efficiency method for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamic, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO3-based memristive application in artificial intelligence.