Design of III-V submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates

For constructing functional photonic integrated circuits, it is expected to incorporate an efficient and compact laser source into the complementary metal-oxide-semiconductor platform. Monolithic integration of III-V submicron lasers on patterned SOI substrates by means of the aspect ratio trapping method is a promising solution. Here, we have designed submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates by three dimensional finite difference time domain simulation, effectively confining the light into the submicron lasers without removing the top Si layer. The reversed ridge waveguide structure can be formed by extending the III-V materials out of the SiO2 trench. The high-quality InP reversed ridge waveguide epitaxial structures have been obtained. The results of the simulations show that the optical leakage loss is reduced to the order of 10-2. This provides a new approach to develop the silicon-based submicron lasers emitting at the telecom bands.