Ion-beam Processing of 2-Dimensional Materials

In this work we will review two post-synthetic methods for controlling defects and doping, in 2D-materials, namely hyperthermal ion implantation (HyTII) and helium ion microscopy (HIM) based processing with a focused He-ion beam. HyTII processing ranges in energy between that of plasma processing and traditional ion implantation, however, it benefits from a monoenergetic beam energy, with precise control over energy, direction, and dose. We will discuss the use of HyTII for forming nitrogen doped graphene along with initial doping studies of transition metal dichalcogenides (TMDs). We have utilized HIM processing to create defects and to nano-machine features in a wide range of TMDs. HIM processing will be correlated with changes in the photoluminescence and Raman spectra of WS2 with dose. To conclude, we will review recent results on HIM processing formation of single photon emitters, particularly in MoS2, and summarize future opportunities in ion-beam processing of 2D materials.