Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
2019
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including
quantum anomalous Hall effect,
axionelectrodynamics and
Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic
topological insulatorswere proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progresses, the detailed
electronic structuresobserved in this family of compounds remain controversial up to date. Here, combining the use of synchrotron and laser light sources, we carried out comprehensive and high resolution
angle-resolved photoemission spectroscopystudies on MnBi2Te4, and clearly identified its topological
electronic structuresincluding the characteristic gapless topological
surface states. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences for the bulk and
surface states, respectively. The identification of the detailed
electronic structuresof MnBi2Te4 will not only help understand its exotic properties, but also pave the way for the design and realization of novel phenomena and applications.
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