The first back-side illuminated types of Kyoto's X-ray astronomy SOIPIX
2016
Abstract We have been developing Kyoto's
X-ray astronomySOI pixel sensors, called “XRPIX”, aiming to extend the frontiers of
X-ray astronomywith the wide-band
imaging spectroscopyin the 0.5–40 keV band. A dead layer on the X-ray incident surface should ideally be as thin as possible to achieve a high sensitivity below 1 keV, and the depletion layer is required to be thick enough to detect 40 keV X-rays. Thus, we have started developing fully-depleted back-side illuminated (BI) types of XRPIXs. This paper reports on our first two BI devices and their X-ray evaluation (2.6–12 keV). The
device named“XRPIX2b-FZ-LA” successfully reaches a full depletion with a thickness of 500 μm. On the other hand, it has a dead layer with a thickness of 1.1–1.5 μm and struggles to achieve the requirement of 1.0 μm. The other
device named“XRPIX2b-CZ-PZ”, which is applied with a thin Si sensor-layer and an improved back-side process, is found to satisfy the requirement with its thickness of 0.9–1.0 μm, including Al optical blocking filter of 0.2 μm, although the Si sensor-layer is rather thin with 62 μm. We also describe in this paper the X-ray calibration system that we have built for the X-ray evaluation of XRPIXs.
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