Measurement of the Azimuthal Angle Dependence of Third Harmonic Generation from Narrow-gap Semiconductor Surfaces

Reflection type measurements were performed on narrow-gap semiconductors such as InSb and InAs bulk samples for harmonic generation using intense terahertz pulses from free electron laser. We successfully measured the characteristic azimuthal angle dependence of the third harmonic generation (THG). The results show cos3θ and cos6θ dependence at different polarization layouts for InAs(111).