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Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
2018
Julietta Weiße
Martin Hauck
Tomasz Sledziewski
Mattias Tschiesche
Michael Krieger
Anton J. Bauer
Heinz Mitlehner
L. Frey
Tobias Erlbacher
Keywords:
Hall effect
Composite material
Metallurgy
Materials science
Aluminium
Ionization energy
admittance spectroscopy
Correction
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