High temperature semiconductor sensor for the detection of fluorine

Abstract A chemical semiconductor sensor based on a silicon carbide substrate was investigated for the high temperature measurements of fluorine up to 350°C. The use of the structure SiC/SiO 2 /LaF 3 /Pt at room temperature leads to results comparable to the silicon based sensor. The influence of the temperature on the sensor response time was smaller than expected but the increased desorption rate and a high signal to noise ratio improved the detection limit. An impulse method using the initial slope of the response curve was shown to be advantageous.