wavelength vertical cavity surface emitting lasers.

C. Levallois, A. Le Corre, S. Loualiche, O. Dehaese, H. Folliot, C. Paranthoen, F. Thoumyre, and C. Labbe. /DERUDWRLUHG¶(WXGHGH1D nostructures Semiconductrices - CNRS UMR FOTON 6082 INSA de Rennes, 20 Avenue des Buttes de Coesmes, F34043 Rennes Cedex, France (Received Amorphous silicon (a -Si) and amorphous silicon nitride (a -SiN