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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure
Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure
2021
Ji-Yao Du
Ji-yu Zhou
Xiao-Bo Li
Taofei Pu
Liuan Li
Xin-Zhi Liu
Jin-Ping Ao
Keywords:
Optoelectronics
Materials science
Doping
Correction
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