A Fully-Scalable De-Embedding Method for On- Wafer S-Parameter Characterization of CMOS RFMicrowave Devices

An accurate and efficient de-embedding method for on-wafer device measurements at RFlmicrowave frequencies is presented. This method is based on transmission-line theory and does not require any physical equivalent-circuit model for external parasitic components. The propagation constantand characteristic impedanceof the "THRU" dummy structure were determined to create scalableinterconnect parameters for the parasitic networks connected to the three terminals of a MOSFET. Compared with the conventional scalablede-embedding method, the proposed procedure can further eliminate the unwanted parasitics from the source terminal. The performance of this new method was also validated by comparison with the "open-s hort" de-embedding technique.