Improved Resistive Switching of SnO 2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment

In this work, we reported improved resistive switching (RS) of SnO2-based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the devices became commonly lower, and when comparing SnO2 RRAM devices, the optimal RS characteristics are obtained from the sample with Ag top-electrode deposited at WP of 10 mTorr and after the MWT process. The filament was also investigated, for the sample deposited at 5 mTorr, the diameter of the filament was wider in both the high resistive state and the low resistive state as a result of increasing the number of cycles. As a result, the larger the diameter of the filament, the longer the time for the filament formation and rupture was found.