A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs

An improved two-dimensional analysis of non-uniformly doped enhancement-mode MOSFETs is presented. The fringing field effect, a major constraint in miniaturization, is accurately incorporated to develop close-form expressions for the channel electric field, threshold voltage and drain current of short channel MOSFETs. The close agreement with experimental/simulated data validates the model for design and optimization of short-channel MOSFETs for VLSI applications.