A bipolar shaping amplifier for high capacitance silicon detectors

This paper presents the development and testing of a 4 complex pole bipolar shaping amplifier for use with Si (PIPS®) detectors. These detectors typically have high detector capacitances. The influence of the number of poles on the noise parameters is investigated to optimize the shaping amplifier for high capacitance detectors. The effect of an additional pole coming from RC-feedback preamplifiers on the noise and the effect of pole-zero compensation is investigated. The presented circuit is designed such that the pole-zero compensation can be done accurately.