Selective self-oriented growth of (200), (002) and (020) δ-WO3 films via metal-organic chemical vapor deposition

Abstract We demonstrated that selective self-oriented growth of triclinic tungsten trioxide(δ-WO3) films with (200), (002) and (020) orientations on polycrystalline AlN substrate using metal-organic chemical vapor deposition (MOCVD) by changing W(CO)6 vaporization temperature. At deposition temperatures of 1123–1223 K and total chamber pressureof 0.2 kPa, the orientation of δ-WO3 films changed from (200) to (002) to (020) to (002) plane as the increase of W(CO)6 precursor vaporization temperature from 333 to 353 to 373 to 393 K. The (200)-, (002)- and (020)-oriented δ-WO3 films exhibited high deposition rates of 42, 213 and 317 μm h−1, respectively.