Photorecombination studies of highly charged tungsten ions at Shanghai EBIT

In this paper, we report studies on photorecombination (PR) processes for highly charged W ions. The experiment was performed at Shanghai electron beam ion trap by employing a fast electron beam-energy scanning technique. The KLL dielectronic recombination (DR) resonance strengths for He- up to O-like W ions were determined. The strong interference effect between DR and radiative recombination (RR) was observed and the Fano factor, which measures the interference degree, was determined for the main resonances of ground state He-, Be-, B-, C-, N-, and O-like W ions. In addition, we show experimentally that an autoionizing state can have both Fano and Lorentzian behavior naturally, depending on the processes involved. A fully relativistic configuration interaction method implemented in the flexible atomic code was employed to calculate DR, RR processes and also the inference effect.