GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets

GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchetswere fabricated and characterized. From three-dimensional potential simulation results and current–voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing- ratchetmechanism.