A novel Negative Bias Temperature Instability model for nanoscale Finfet

This paper presents both static and dynamic NBTI Negative Bias Temperature Instability model based on the novel Reaction-Trapping theory. The accuracy of the proposed is greatly improved comparing to the classical Reaction-Diffusion theory, and the results agree well with the experiments over a wide range of temperature. Finally, the NBTI model of FinFETs is demonstrated through SRAM simulation.