Tetramethylbenzidine-TetrafluoroTCNQ: A narrow-gap semiconducting salt with room temperature relaxor ferroelectric behavior
2021
We present an extension and revision of the spectroscopic and structural data of the mixed stack charge transfer (CT) crystal 3,3$^\prime$,5,5$^\prime$-tetramethylbenzidine--tetrafluoro-tetracyanoquinodimethane (TMB-TCNQF$_4$), associated with new electric and dielectric measurements. Refinement of syncrotron structural data at low temperature have led to revise the previously reported [Phys. Rev. Mat. \textbf{2}, 024602 (2018)] $C2/m$ structure. The revised structure is $P2_1/m$, with two dimerized stacks per unit cell, and is consistent with the vibrational data. However, polarized Raman data in the low-frequency region also indicate that by increasing temperature above 200 K the structure presents an increasing degree of disorder mainly along the stack axis. This finds confirmation in the analysis of the anisotropic displacement parameters of the structure. TMB-TCNQF$_4$ is confirmed to be a narrow gap semiconductor ($E_a \sim 0.3$ eV) with room $T$ conductivity of $\sim 10^{-4}~ \Omega^{-1}$ cm$^{-1}$, while dielectric measurement have evidenced a typical relaxor ferroelectric behavior already at room $T$, with a peak in real part of dielectric constant $\epsilon'(T,\nu)$ around 200 K and 0.1 Hz. The relaxor behavior is explained in terms of the presence of spin solitons separating domains of opposite polarity that yield to ferrolectric nanodomains.
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