Ant Lion Optimizer for Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors

A mathematical model for the effect of oxide thickness on ambient conduction is provided in the Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as the future of IC (integrated circuit) technology, the suppression of ambipolar behaviour in SB-CNTFET is imperative. The ambipolar nature of SB-CNTFET contributes to a high amount of leakage current. tox ≈ 49.91nm uses a dielectric of gate oxide with a thickness to inhibit the ambipolar behaviour. In an SB-CNTFET, the conductance is regulated by the electrical field at the source/drain contacts and the band bending length at the contacts is determined by tox. Therefore, the prime parameter tox that affects the Schottky barrier width and the subthreshold area. The suppression of ambipolar property is presented. The SB-CNTFET is produced using high-K dielectrics such as Zirconium dioxide. This work discusses the suppression of ambipolar activity in SB-CNTFETs without reducing the Ion current using an appropriate dielectric with optimum thickness.