A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

Orner,Liu,Rainey,Stricker,Geiss,Gray,Zierak,Gordon,Collins,Ramachandran,Hodge,Willets,Joseph,Dunn,Rieh,Jeng,Eld,Freeman,Ahlgren

A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

2003

Orner
Liu
Rainey
Stricker
Geiss
Gray
Zierak
Gordon
Collins
Ramachandran
Hodge
Willets
Joseph
Dunn
Rieh
Jeng
Eld
Freeman
Ahlgren

We present for the first time a very high performance SiGe HBT with f/sub T/ = 200 GHz and f/sub max/ = 280 GHz that has been successfully integrated with IBM's standard 0.13 /spl mu/m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

Keywords:

Heterojunction bipolar transistor
Electrical engineering
Physics
BiCMOS
IBM
CMOS
Electronic engineering
bicmos technology
bicmos integrated circuits
Optoelectronics

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