Quantifying Loss Mechanisms in InGaAsP/InP Quantum Dash and Quantum Well Lasers

As quantum dash laser designs gain technological maturity, there is a need to investigate performance limiting factors. We simulate monolithic ridge waveguide quantum dash (QDash) and quantum well (QW) lasers in the InGaAsP/InP-system to investigate the mechanisms limiting device performance at elevated temperatures. Our findings are compared to experimental data obtained for representative devices. We quantify dominant loss mechanisms as a function of injection current density at different temperatures and compare results for QW and QDash structures. We find a variation in relative loss contribution between devices. At higher temperatures we find Auger recombination emerging as the dominant loss mechanism.