Tracking and radiation tests of silicon microstrip detectors

We have measured a signal‐to‐noise of 37:1 at room temperature for 227 GeV pions at Fermilabon the n(ohmic)‐side of a Hamamatsu AC‐coupled double‐sided silicon microstrip detector with 0.64 cm long strips. Position resolutions at normal incidence of 3.5±0.4 μm (10.4±0.5 μm) were obtained for the p‐side (n‐side) which had 25 μm (50 μm) pitch and 50 μm readout. The effects of radiation damageon the n‐side have also been measured with a 60Co source. Phase‐gain measurements imply that the accumulation layer bias capacitance and AC‐coupling capacitance are constant with dose up to 5 Mrad with values of 1.2 pf and 12 pf per strip respectively. The bias resistance per strip has a value of ∼0.8 MΩ at 0 and 5 Mrad and ∼0.4 MΩ at doses of 20–100 Krad.