Growth of a High Quality GaN Wafer from Point Seeds by the Na-Flux Method

Gallium nitride (GaN) has attracted significant attention for applications in both optical devices and high-power electronic devices. In order to spread the use of GaN devices, fabrication of bulk GaN crystals is highly desired. In this study, we demonstrate our trials to obtain a high-quality bulk GaN wafer by a combination of HVPE and Na-flux method.