Polysilicon thin film developed on ultra-thin flexible glass for temperature sensor

A polycrystalline silicon (poly-Si) thin film has been developed on an ultra-thin flexible glass (uTFG) substrate using the aluminum-induced crystallization (AIC) method, and then fully characterized as a semiconductor material for the application of high-sensitive thermal sensors. The developed poly-Si thin film has a sheet resistance of ~ 3.7 KΩ/□ with a temperate coefficient of resistance (TCR) of 2,800 ppm/°C. In comparison to poly-Si thin-film material grown on polyimide substrate via similar processing parameters, this poly-Si on uTFG shows an improvement in thermal sensitivity of 12 % compared to poly-Si thin-film developed on polyimide. Thus, the poly-Si thin film produced on the uTGF can allow a higher sensitivity for temperature, which can be used for high precision temperature sensing while offering some level of material flexibility for biomedical applications.