Multilayer epitaxial graphene grown on the ({\rm SiC}\,\,000\bar{1}) surface; structure and electronic properties

We review the progress towards developing epitaxial grapheneas a material for carbon electronics. In particular, we discuss improvements in epitaxial graphenegrowth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphenegrown on both polar faces of SiC will be discussed, our discussions will focus on graphenegrown on the C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphenesheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated grapheneplanes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated grapheneplanes.