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A Modified Analytical Model for AlGaN/GaN FinFETs I-V Characteristics
A Modified Analytical Model for AlGaN/GaN FinFETs I-V Characteristics
2019
U. F. Ahmed
M. Mansoor Ahmed
Q. D. Memon
Keywords:
Condensed matter physics
Chemistry
Optoelectronics
algan gan
Heterojunction
Correction
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