High Mobility and Low Density of Trap States in Dual‐Solid‐Gated PbS Nanocrystal Field‐Effect Transistors

Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V-1 s(-1)) and the high on/off ratio (10(5)-10(6)), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.