Temperature Dependence of Nitrogen Dissolution on Na flux Growth

Abstract In a previous report, we demonstrated the monitoring of electrical resistance of Ga-Na melt and revealed the time dependency of the nitrogen dissolution in Ga-Na flux. In-situ monitoring of nitrogen dissolution process into the Ga-Na melt is important in elucidating the mechanism of Na-flux growth. In this report, we investigate the temperature dependence of nitrogen dissolution with electrical resistance measurement of the Ga-Na melt. The results revealed a significant enhancement of Ga-N bonding formation at high temperature. Dissociation process of nitrogen is thought to be the key factor that determines the rate of nitrogen dissolution.