Direct integration of piezoactuator array with active-matrix oxide thin-film transistors using a low-temperature solution process
2019
Abstract The integration of a
thin-filmpiezoelectric actuator with standard CMOS (Complementary Metal-Oxide-Semiconductor) technology has attracted many practical interests for totally integrated
smart devicessuch as electronics, microfluidics, sensors and actuators. However, the major obstacle of the integration lies in high annealing temperature required for crystallization of piezoelectric
thin-films(600–750 °C), which leads to degradation of back circuitry. This paper reports, for the first time, a successful
direct integrationof lead-zirconium-titanate (PZT)
thin-film, the piezoelectric with the greatest commercial applicability, with an
active-matrix
oxide thin-film transistor(TFT) using a low-temperature (450 °C)
solution-processablePZT
thin-film. The actuation of the PZT actuator array, electrically driven by the
active-matrixTFT, was confirmed. The proposed device can be used in various applications such as
micropumps/valves, microfluidic control, energy harvesting, sensors and the like.
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