Wideband Schottky Doubler with High Efficiency and Output Power

In this paper, a 300 GHz power-combined doubler by using two device chips together is developed to obtain the high power handling capacity. Each doubler chip is a balanced and robust circuit, which features six diodes and high RF blocking bias filter on a 5-µm-thick GaAs membrane manufactured by the LERMA-C2N Schottky process. Partial results of the practical conversion efficiency with ~15% have been displayed in the band of 260–310 GHz roughly, which indicate that this dual-chip doubler can work effectively. Therefore, this power-combined doubler with high power handling can be served as the second stage of the 600 GHz/1200 GHz frequency multiplier chain for the JUICE-SWI.