Fabrication of α-Si3N4 nanobelts assembled by Si3N4 microcrystals on the nanowires via crystallization of amorphous Si3N4 powders

Abstract In this paper, α-Si 3 N 4 nanobelts assembled by Si 3 N 4 microcrystals on the nanowires were synthesized from amorphous Si 3 N 4 powders that were prepared by thermolysis of silicon diimide powders. By prolonging the heating time at 1550 °C, the amorphous Si 3 N 4 powders were converted to hexagonal phase α-Si 3 N 4 microcrystals which were adhered to the surface of nanowires to obtain α-Si 3 N 4 nanobelts. The obtained α-Si 3 N 4 nanobelts were hollow in the centre with a width of ∼850 nm and a thickness of ∼150 nm. Microcrystals were deposited on the surface of 2–3 parallel nanowires. The diameter of the Si 3 N 4 microcrystals was 30–230 nm, and the diameter of the nanowires was 50–100 nm. Evaporation of the amorphous Si 3 N 4 powders released Si vapour and N vapour, which led to the formation of the Si 3 N 4 microcrystals. The nanowires grew on the surface of the amorphous Si 3 N 4 powders due to the nucleation and diffusion of Si and N atoms of amorphous Si 3 N 4 powders. The growth mechanism of the products with unique morphology can be considered as a combination of vapour-solid mechanism and secondary nucleation process.