Total ionizing dose effects of 60Co-γ ray radiation on the resistive switching and its bending performance of Al-In-O/InOx-based flexible RRAM device

Abstract Flexible resistive switching random access memory (RRAM) device is one of the promising candidates for non-volatile memory used in space because of its features such as simple structure, high speed, low power consumption, durability and lightweight with reduction in thickness. Al-In-O/InOx self-mixing layer can be applied for flexible RRAM due to its low annealing temperature (i.e. temperatures