The CLEO III silicon vertex detector
2003
Abstract The design and operation of the
CLEOIII silicon vertex detector is described in this report. This detector consists of four layers of double-sided silicon wafers covering 93% of the
solid angle. After initially meeting its signal-to-noise and spatial resolution design goals, the r − φ side efficiency of layers 1 and 2 decreased dramatically due to radiation-induced sensor effects.
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