Design of electrically pumped sub-micron lasers on patterned SOI substrates

We have designed electrically pumped sub-micron lasers on the SOI substrates, and proposed to incorporate InP tunnel junctions into sub-micron lasers to reduce carrier absorption loss. Numerical simulations show that the sub-micron laser is able to support a stable optical guide mode with a metal absorption loss of 2.13 dB/cm. And after doping, carrier absorption loss of the sub-micron laser without a tunnel junction is 11.67 dB/cm while carrier absorption loss of the sub-micron laser with InP tunnel junction is 6.72dB/cm. By incorporating InP tunnel junction, carrier absorption loss of the sub-micron laser is reduced by 42% so that a lower lasing threshold is obtained. The optimization of metal absorption loss and carrier absorption loss are of great significance for electrically pumped lasing, which promotes the realization of silicon-optical full integration