A FUZZY METHOD TO OPTIMIZE THE PERFORMANCE OF SI D-MESFETS : INFLUENCE OF PEARSON PROFILE

We present a new analytical model for switching characteristics of Si d-MESFETs using Pearson-IV-distribution. The analysis is carried out with P, As and Sb implantations under thermal annealing. The behaviour of switching parameters viz., drain-source resistance and time constants (tgs, tgd and tT) is studied. We also demonstrate the influence of Pearson distribution on the profile shape effects extensively. The model explains the complicated dependences of the switching parameters on the profile studies. The results are compared with Gaussian Model and a reduction in time constants indicates an enhancement of the device performance.