Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors

This letter proposes an advanced compact model for anti-ambipolar transistors based on a lateral thin-film material heterojunction. The modeling idea focuses on an analytical description of component currents and bridging methods necessary for controllable transition between operation regimes. The model is validated by experimental data, and predictive simulations are carried out to demonstrate its applicabilities.