Spin dependence of inter-edge-channel scattering in Si-MOSFETs in the quantum Hall regime

We have measured the nonequilibrium distribution of the electrons among the spin-split edge channels in a high-mobility Si-MOSFET in a high magnetic field. Contrary to GaAs, the relaxation of the nonequilibrium occupation occurs mainly between edge channels with the same spin direction due to the relatively larger spin splitting in Si. The nonequilibrium differences among the occupations of the edge channels show rich current dependence and saturate at higher currents.