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Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles
Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles
2018
Christoph W. Wiegand
Robert Zierold
René Faust
Darius Pohl
Andy Thomas
Bernd Rellinghaus
Kornelius Nielsch
Keywords:
Topological insulator
Atomic layer deposition
Quartz crystal microbalance
Semiconductor
Analytical chemistry
Surface modification
Materials science
Correction
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