Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing
2018
We present a fundamental study of the
erbiumluminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at
fluencesup to 5 × 1015 ions·cm−2, followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The
Rutherford Backscattering Spectrometryshowed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the
fluence, but in fact the maximum reached the fully disordered target even in the lowest ion
fluenceused. The post-implantation annealing at 800 °C in vacuum had a further beneficial effect on
erbiumluminescence intensity at around 1.5 μm, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.
Keywords:
-
Correction
-
Source
-
Cite
-
Save
44
References
1
Citations
NaN
KQI